| Temperature Operating Range | -65 to +200 °C |
| Primary Type | Si |
| Configuration | Common Base |
| Number of Elements per Chip | 1 |
| Material Type | Silicon |
| Gain, DC Current, Maximum | 100 |
| UPC Code | 768249080718 |
| Gain, DC Current, Minimum | 25 mA |
| Voltage, Collector to Base | 100 V |
| Collector Current | 30 A |
| Transistor Type | NPN |
| Voltage, Collector to Emitter | 100 V |
| Current, Continuous Collector | 30 A |
| Resistance, Thermal, Junction to Case | 0.875 °C/W |
| Device Dissipation | 200 W |
| Voltage, Breakdown, Collector to Emitter | 100 V |
| Voltage, Collector to Emitter, Saturation | 0.8 V |
| Number of Pins | 3 |
| Polarity | NPN |
| Height | 0.35" (8.89mm) |
| Maximum Operating Temperature | +200 °C |
| Diameter | 22.2 mm |
| Voltage, Saturation, Base to Emitter | 1.3 V |
| Temperature Range, Junction, Operating | -65 to +200 °C |
| Dimensions | 22.2 Dia. x 8.89 H mm |
| Material | Si |
| Transistor Polarity | NPN |
| Product Header | Silicon Power Transistor |
| Frequency, Operating | 2 MHz |
| Mounting Type | Through Hole |
| Minimum Operating Temperature | -65 °C |
| Package Type | TO-3 |
| Power Dissipation | 200 W |
| Series | Transistor Series |
| Type | Audio Amplifier, Power |
| Voltage, Emitter to Base | 4 V |
