| Primary Type | Si |
| Configuration | Common Base |
| Temperature, Operating, Range | -65 to +200 °C |
| Number of Elements per Chip | 1 |
| Temperature, Operating, Maximum | +200 °C |
| Material Type | Silicon |
| Voltage, Saturation, Collector to Emitter | 0.15 V |
| Gain, DC Current, Minimum | 25 |
| Voltage, Collector to Base | 80 V |
| Transistor Type | PNP |
| Voltage, Collector to Emitter | 80 V |
| Current, Continuous Collector | 1 A |
| Resistance, Thermal, Junction to Case | 20 °C/W |
| Device Dissipation | 1.25 W |
| Voltage, Breakdown, Collector to Emitter | 80 V |
| Voltage, Collector to Emitter, Saturation | 0.5 V |
| Number of Pins | 3 |
| Polarity | PNP |
| Height | 0.26" (6.6mm) |
| Diameter | 9.39 mm |
| Voltage, Saturation, Base to Emitter | 0.9 V |
| Voltage, Base to Emitter | 5 V |
| Temperature Range, Junction, Operating | -65 to +200 °C |
| Dimensions | 9.39 Dia. x 6.6 H mm |
| Material | Si |
| Transistor Polarity | PNP |
| Current, Emitter Cutoff | 10 μA |
| Frequency, Operating | 100 to 400 MHz |
| Mounting Type | Through Hole |
| Temperature, Operating, Minimum | -65 °C |
| Package Type | TO-39 |
| Power Dissipation | 1.25 W |
| Type | Amplifier, Driver, Switch |
| Voltage, Emitter to Base | 5 V |
| Complement to | NPN |
| Current, Collector | 1 A |
| Current, Gain | 25 |
| Brand/Series | Transistor Series |
