| Typical Input Capacitance @ Vds (pF) | 1580@50V |
| Typical Output Capacitance @ Vds (pF) | 810@50V |
| Configuration | Single Dual Source |
| PCB changed | 4 |
| Maximum Gate Source Leakage Current (nA) | 4000 |
| Number of Elements per Chip | 1 |
| Typical Power Gain (dB) | 21 |
| ECCN (US) | EAR99 |
| Maximum Power Dissipation (mW) | 1350000 |
| Channel Mode | Enhancement |
| Automotive | No |
| Minimum Operating Temperature (°C) | -65 |
| Maximum Operating Temperature (°C) | 200 |
| Supplier Package | Case T-2 |
| Maximum IDSS (uA) | 4000 |
| Package Height | 7.62 |
| Channel Type | N |
| Maximum Continuous Drain Current (A) | 60 |
| Military | No |
| Maximum Drain Source Voltage (V) | 170 |
| Maximum Gate Source Voltage (V) | ±40 |
| Material | Si |
| Package Length | 38.1 |
| Standard Package Name | Module |
| Pin Count | 4 |
| Mounting | Screw |
| Typical Drain Efficiency (%) | 45 |
| 欧盟限制某些有害物质的使用 | Compliant |
| Typical Reverse Transfer Capacitance @ Vds (pF) | 65@50V |
| Output Power (W) | 600 |
| Part Status | Active |
| Packaging | Box |
| Maximum Gate Threshold Voltage (V) | 4.4 |
| Package Width | 25.4 |
| Maximum Frequency (MHz) | 80 |
