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JANTXV2N3637
Microsemi

JANTXV2N3637

Trans GP BJT PNP 175V 1A 1000mW 3-Pin TO-39 Bag
中间价(CNY):134.139
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JANTXV2N3637 规格参数
ConfigurationSingle
PCB changed3
HTS8541.29.00.95
Number of Elements per Chip1
Maximum Collector-Emitter Voltage (V)175
ECCN (US)EAR99
Maximum Power Dissipation (mW)1000
Maximum Base Emitter Saturation Voltage (V)0.8@1mA@10mA|0.9@5mA@50mA
AutomotiveNo
Minimum Operating Temperature (°C)-65
Maximum Operating Temperature (°C)200