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2N1613L
Microsemi

2N1613L

Trans GP BJT NPN 30V 0.5A 800mW 3-Pin TO-5 Bag
中间价(CNY):19.1615
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2N1613L 规格参数
ConfigurationSingle
PCB changed3
Number of Elements per Chip1
Maximum Collector-Emitter Voltage (V)30
ECCN (US)EAR99
Maximum Power Dissipation (mW)800
Maximum Base Emitter Saturation Voltage (V)1.3@15mA@150mA
AutomotiveNo
Minimum Operating Temperature (°C)-65
Maximum Operating Temperature (°C)175
Supplier PackageTO-5
数据手册