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2003
Microsemi

2003

Trans RF BJT NPN 50V 0.5A 3-Pin Case 55BT-1
中间价(CNY):-
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2003 规格参数
Maximum Junction Case Thermal Resistance15°C/W
ConfigurationSingle
PCB changed3
Number of Elements per Chip1
Maximum Collector-Emitter Voltage (V)50
Typical Power Gain (dB)8.5
ECCN (US)EAR99
Maximum DC Collector Current Range (A)0.5 to 2
Maximum Power Dissipation (mW)12000
AutomotiveNo
Minimum Operating Temperature (°C)-65