| Maximum Operating Current | 18 mA |
| 计划交货期 B | 8542.2129-00 |
| Max Processing Temp | 260 |
| HTSN | 8542.2129-00 |
| Maximum Erase Time | 0.05/Chip s |
| Maximum Programming Time | 0.01/Word ms |
| Density | 16 Mb |
| Command Compatible | Yes |
| Timing Type | Asynchronous |
| Screening Level | Commercial |
| Address Bus Width | 20 Bit |
| Typical Operating Supply Voltage | 3.3 V |
| Interface Type | Parallel |
| Sector Size | 4 x 512 KB |
| Boot Block | Yes |
| Operating Temperature | 0 to 70 °C |
| Number of Words | 1 MWords |
| Erase Suspend/Resume Modes Support | Yes |
| UNSPSC VERSION | V15.1101 |
| Location Of Boot Block | Bottom |
| ECC Support | No |
| Maximum Random Access Time | 70 ns |
| Architecture | Sectored |
| Block Organization | Symmetrical |
| Support of Page Mode | No |
| Maximum Operating Supply Voltage | 3.6 V |
| ECCN | 3A991.b.1.a |
| Support of Common Flash Interface | Yes |
| Program Current | 35 mA |
| Number of Bits per Word | 16 Bit |
| OE Access Time | 35 ns |
| Lead Finish | Matte Tin |
| Cell Type | NOR |
| Mounting | Surface Mount |
| Simultaneous Read/Write Support | Yes |
| Minimum Operating Supply Voltage | 2.7 V |
| UNSPSC | 32101622 |
| Programming Voltage | 2.7 to 3.6 V |
