Typical Input Capacitance @ Vds (pF) | 460@30V |
Configuration | Dual Dual Drain |
Typical Turn-Off Delay Time (ns) | 17.4 |
PCB changed | 8 |
Maximum Gate Source Leakage Current (nA) | 100 |
Number of Elements per Chip | 2 |
ECCN (US) | EAR99 |
Typical Rise Time (ns) | 24.6 |
Maximum Power Dissipation (mW) | 2000 |
Channel Mode | Enhancement |
Typical Turn-On Delay Time (ns) | 3.8 |
Automotive | Unknown |
Minimum Operating Temperature (°C) | -55 |
Maximum Operating Temperature (°C) | 150 |
Supplier Package | SOIC |
Maximum IDSS (uA) | 1 |
Typical Fall Time (ns) | 10.6 |
Process Technology | TMOS |
Package Height | 1.38 |
Channel Type | N |
EU RoHS | Compliant |
Maximum Continuous Drain Current (A) | 7.5 |
Military | No |
Maximum Drain Source Voltage (V) | 30 |
Maximum Gate Source Voltage (V) | ±20 |
Maximum Drain Source Resistance (mOhm) | 22@10V |
Package Length | 4.9 |
Typical Gate Charge @ 10V (nC) | 11.7 |
Standard Package Name | SOP |
Pin Count | 8 |
Mounting | Surface Mount |
Lead Shape | Gull-wing |
Part Status | Active |
Product Category | Power MOSFET |
Packaging | Tape and Reel |
Maximum Gate Threshold Voltage (V) | 3 |
Package Width | 3.9 |
Typical Gate Charge @ Vgs (nC) | 6.1@4.5V|11.7@10V |