Lockheed Martin

311325-04

MICROCIRCUIT,MEMORY

中间价(CNY):-

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311325-04 规格参数

Input Circuit Pattern	10 input
Memory Capacity	unknown
Features Provided	bipolar and w/disable and w/decoded output and w/buffered output and monolithic and positive outputs and programmable and w/enable and 3-state output and w/storage and hermetically sealed and programmed
Operating Temp Range	+0.0/+75.0 deg celsius
Case Outline Source And Designator	-0-001-ae joint electron device engineering council
Test Data Document	11530-311325 drawing (this is the basic governing drawing, such as a contractor drawing, original equipment manufacturer drawing, etc.; excludes any specification, standard or other document that may be referenced in a basic governing drawing)
Inclosure Material	ceramic and glass
End Item Identification	cheyenne missile model 427m
Terminal Type And Quantity	16 printed circuit
Inclosure Configuration	dual-in-line
Bit Quantity (Non-Core)	1024
Storage Temp Range	-65.0/+150.0 deg celsius
Body Width	0.240 inches minimum and 0.280 inches maximum
Memory Device Type	prom
Word Quantity (Non-Core)	256
Output Logic Form	transistor-transistor logic
Body Length	0.745 inches minimum and 0.785 inches maximum
Maximum Power Dissipation Rating	625.0 milliwatts
Body Height	0.120 inches minimum and 0.160 inches maximum
Voltage Rating And Type Per Characteristic	5.5 volts maximum power source
Time Rating Per Chacteristic	35.00 nanoseconds maximum propagation delay time, low to high level output and 35.00 nanoseconds maximum propagation delay time, high to low level output

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