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SPD08P06PGBTMA1
Infineon

SPD08P06PGBTMA1

P-沟道 60 V 8.83 A 300 mΩ 10 nC SipMOS 小信号 晶体管 - DPAK
中间价(CNY):2.6805
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SPD08P06PGBTMA1 规格参数
Product Attributes Select All
Input Capacitance (Ciss) @ Vds420pF @ 25V
Other NamesSPD08P06PGINDKR
Operating Temperature-55°C ~ 175°C (TJ)
FET FeatureStandard
CategoryDiscrete Semiconductor Products
DatasheetsSPD08P06P_G
Gate Charge (Qg) @ Vgs13nC @ 10V
FET TypeMOSFET P-Channel, Metal Oxide
Mounting TypeSurface Mount
Rds On (Max) @ Id, Vgs300 mOhm @ 10A, 6.2V