| Transistors - FETs, MOSFETs - Single |
Input Capacitance (Ciss) @ Vds | 2240pF @ 15V |
Gate Charge (Qg) @ Vgs | 78nC @ 10V |
FET Type | N-Channel |
Supplier Device Package | 8-SO |
Drain to Source Voltage (Vdss) | 30V |
Power Dissipation (Max) | 2.5W (Ta) |
Package / Case | 8-SOIC (0.154", 3.90mm Width) |
Technology | MOSFET (Metal Oxide) |
Manufacturer | Infineon Technologies |
PCN Obsolescence/ EOL | EOL122B 02/Oct/2007 |
Operating Temperature | -55°C ~ 150°C (TJ) |
FET Feature | - |
Datasheets | SI4420DY |
Categories | Discrete Semiconductor Products |
Product Training Modules | Discrete Power MOSFETs 40V and Below |
Mounting Type | Surface Mount |
Rds On (Max) @ Id, Vgs | 9 mOhm @ 12.5A, 10V |
Vgs(th) (Max) @ Id | 1V @ 250µA |
Standard Package | 4,000 |
Series | HEXFET® |
Featured Product | Data Processing Systems |
Packaging | Tape & Reel (TR) |
Part Status | Obsolete |
Current - Continuous Drain (Id) @ 25°C | 12.5A (Ta) |