| Typical Input Capacitance @ Vds (pF) | 633@10V | 
| Configuration | Single | 
| Typical Turn-Off Delay Time (ns) | 588 | 
| PCB changed | 3 | 
| HTS | 8541.29.00.95 | 
| Number of Elements per Chip | 1 | 
| ECCN (US) | EAR99 | 
| Typical Rise Time (ns) | 48 | 
| Maximum Power Dissipation (mW) | 1300 | 
| Channel Mode | Enhancement | 
| Typical Turn-On Delay Time (ns) | 350 | 
| Automotive | No | 
| Minimum Operating Temperature (°C) | -55 | 
| Maximum Operating Temperature (°C) | 150 | 
| Supplier Package | SOT-23 | 
| Typical Fall Time (ns) | 381 | 
| Process Technology | HEXFET | 
| Typical Gate to Source Charge (nC) | 1.2 | 
| Package Height | 1.02(Max) | 
| Channel Type | P | 
| EU RoHS | Compliant | 
| Maximum Continuous Drain Current (A) | 3.7 | 
| Military | No | 
| Maximum Drain Source Voltage (V) | 20 | 
| Maximum Gate Source Voltage (V) | ±12 | 
| Maximum Drain Source Resistance (mOhm) | 65@4.5V | 
| Material | Si | 
| Package Length | 3.04(Max) | 
| Standard Package Name | SOT-23 | 
| Typical Reverse Recovery Charge (nC) | 11 | 
| Pin Count | 3 | 
| Mounting | Surface Mount | 
| Typical Output Capacitance (pF) | 145 | 
| Lead Shape | Gull-wing | 
| Part Status | Active | 
| Product Category | Power MOSFET | 
| Typical Gate to Drain Charge (nC) | 2.8 | 
| Packaging | Tape and Reel | 
| Maximum Gate Threshold Voltage (V) | 1.2 | 
| Package Width | 1.4(Max) | 
| Typical Gate Charge @ Vgs (nC) | 8@5V |