| Product Attributes Select All |
| Input Capacitance (Ciss) @ Vds | 4460pF @ 25V |
| PCN Assembly/Origin | Mosfet Backend Wafer Processing 23/Oct/2013 Warehouse Transfer 29/Jul/2015 |
| Category | Discrete Semiconductor Products |
| Online Catalog | N-Channel Standard FETs |
| Gate Charge (Qg) @ Vgs | 110nC @ 10V |
| FET Type | MOSFET N-Channel, Metal Oxide |
| Supplier Device Package | D2PAK |
| PCN Design/Specification | Copper Plating Update 31/Aug/2015 Material Chg 24/Nov/2015 |
| Drain to Source Voltage (Vdss) | 150V |
| Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| PCN Packaging | Package Drawing Update 19/Aug/2015 Packing Material Update 16/Sep/2016 |
| Manufacturer | Infineon Technologies |
| Other Names | 64-2093PBF 64-2093PBF-ND SP001565018 |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| FET Feature | Standard |
| Datasheets | IRFS(L)4321PbF |
| Product Training Modules | High Voltage Integrated Circuits (HVIC Gate Drivers) |
| Mounting Type | Surface Mount |
| Rds On (Max) @ Id, Vgs | 15 mOhm @ 33A, 10V |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Standard Package | 50 |
| Series | HEXFET® |
| Power - Max | 350W |
| Packaging | Tube |
| Part Status | Not For New Designs |
| Current - Continuous Drain (Id) @ 25°C | 85A (Tc) |
| Family | Transistors - FETs, MOSFETs - Single |
