| Transistors - FETs, MOSFETs - Single |
PCN Assembly/Origin | Mosfet Backend Wafer Processing 23/Oct/2013 |
FET Type | N-Channel |
Input Capacitance (Ciss) (Max) @ Vds | 4530pF @ 25V |
Gate Charge (Qg) (Max) @ Vgs | 107nC @ 10V |
Supplier Device Package | D2PAK |
PCN Design/Specification | Material Chg 24/Nov/2015 |
Drain to Source Voltage (Vdss) | 150V |
Power Dissipation (Max) | 330W (Tc) |
Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Technology | MOSFET (Metal Oxide) |
Manufacturer | Infineon Technologies |
Design Resources | IRFB4228PBF Saber Model IRFB4228PBF Spice Model |
PCN Obsolescence/ EOL | Multiple Devices 25/Apr/2014 |
Other Names | SP001571734 |
Operating Temperature | -40°C ~ 175°C (TJ) |
FET Feature | - |
Datasheets | IRFS(L)4228PbF |
Categories | Discrete Semiconductor Products |
Product Training Modules | High Voltage Integrated Circuits (HVIC Gate Drivers) |
Mounting Type | Surface Mount |
Rds On (Max) @ Id, Vgs | 15 mOhm @ 33A, 10V |
Vgs(th) (Max) @ Id | 5V @ 250µA |
Standard Package | 50 |
Series | HEXFET® |
Featured Product | Data Processing Systems |
Packaging | Tube |
Part Status | Obsolete |
Current - Continuous Drain (Id) @ 25°C | 83A (Tc) |