| Transistors - FETs, MOSFETs - Single |
| PCN Assembly/Origin | Mosfet Backend Wafer Processing 23/Oct/2013 Additional Wafer Source 11/Nov/2014 |
| Online Catalog | N-Channel MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Input Capacitance (Ciss) (Max) @ Vds | 9370pF @ 50V |
| Gate Charge (Qg) (Max) @ Vgs | 240nC @ 10V |
| Supplier Device Package | D2PAK |
| PCN Design/Specification | Copper Plating Update 31/Aug/2015 Material Chg 24/Nov/2015 |
| Drain to Source Voltage (Vdss) | 75V |
| Power Dissipation (Max) | 370W (Tc) |
| Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Technology | MOSFET (Metal Oxide) |
| PCN Packaging | Package Drawing Update 19/Aug/2015 Packing Material Update 16/Sep/2016 |
| Manufacturer | Infineon Technologies |
| Vgs (Max) | ±20V |
| Other Names | IRFS3107TRLPBFDKR |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| FET Feature | - |
| Datasheets | IRFS(L)3107PBF |
| Categories | Discrete Semiconductor Products |
| PCN Other | Multiple Changes 06/Oct/2014 |
| Product Training Modules | High Voltage Integrated Circuits (HVIC Gate Drivers) |
| Mounting Type | Surface Mount |
| Rds On (Max) @ Id, Vgs | 3 mOhm @ 140A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Standard Package | 1 |
| Series | HEXFET® |
| Featured Product | Data Processing Systems |
| Packaging | Digi-Reel® |
| Part Status | Active |
| Current - Continuous Drain (Id) @ 25°C | 195A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
