| Transistors - FETs, MOSFETs - Single |
Input Capacitance (Ciss) @ Vds | 8970pF @ 50V |
PCN Assembly/Origin | Mosfet Backend Wafer Processing 23/Oct/2013 Additional Wafer Source 11/Nov/2014 Warehouse Transfer 29/Jul/2015 |
Online Catalog | N-Channel Standard FETs |
Gate Charge (Qg) @ Vgs | 300nC @ 10V |
FET Type | N-Channel |
Supplier Device Package | D2PAK |
PCN Design/Specification | Copper Plating Update 31/Aug/2015 Material Chg 24/Nov/2015 |
Drain to Source Voltage (Vdss) | 60V |
Power Dissipation (Max) | 375W (Tc) |
Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Technology | MOSFET (Metal Oxide) |
PCN Packaging | Package Drawing Update 19/Aug/2015 Packing Material Update 16/Sep/2016 |
Manufacturer | Infineon Technologies |
Other Names | 64-2141PBF 64-2141PBF-ND SP001568064 |
Operating Temperature | -55°C ~ 175°C (TJ) |
FET Feature | - |
Datasheets | IRFS(L)3006PBF |
Categories | Discrete Semiconductor Products |
PCN Other | Multiple Changes 06/Oct/2014 |
Product Training Modules | High Voltage Integrated Circuits (HVIC Gate Drivers) |
Mounting Type | Surface Mount |
Rds On (Max) @ Id, Vgs | 2.5 mOhm @ 170A, 10V |
Vgs(th) (Max) @ Id | 4V @ 250µA |
Standard Package | 50 |
Series | HEXFET® |
Featured Product | Automatic Opening Systems Data Processing Systems |
Packaging | Tube |
Part Status | Not For New Designs |
Current - Continuous Drain (Id) @ 25°C | 195A (Tc) |