| Product Attributes Select All |
| Input Capacitance (Ciss) @ Vds | 2290pF @ 50V |
| PCN Assembly/Origin | Mosfet Backend Wafer Processing 23/Oct/2013 Warehouse Transfer 29/Jul/2015 |
| Category | Discrete Semiconductor Products |
| Online Catalog | N-Channel Standard FETs |
| Gate Charge (Qg) @ Vgs | 69nC @ 10V |
| FET Type | MOSFET N-Channel, Metal Oxide |
| Supplier Device Package | D-Pak |
| Drain to Source Voltage (Vdss) | 60V |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| PCN Packaging | Package Drawing Update 19/Aug/2015 Packing Material Update 16/Sep/2016 |
| Manufacturer | Infineon Technologies |
| Design Resources | IRFR1018EPBF Saber Model IRFR1018EPBF Spice Model |
| Other Names | 64-4127PBF 64-4127PBF-ND SP001567496 |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| FET Feature | Standard |
| Datasheets | IRF(R,U)1018EPbF |
| Product Training Modules | High Voltage Integrated Circuits (HVIC Gate Drivers) |
| Mounting Type | Surface Mount |
| Rds On (Max) @ Id, Vgs | 8.4 mOhm @ 47A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 100µA |
| Standard Package | 75 |
| Series | HEXFET® |
| Power - Max | 110W |
| Packaging | Tube |
| Part Status | Not For New Designs |
| Current - Continuous Drain (Id) @ 25°C | 56A (Tc) |
| Family | Transistors - FETs, MOSFETs - Single |
