| Transistors - FETs, MOSFETs - Single |
Input Capacitance (Ciss) @ Vds | 2159pF @ 25V |
Online Catalog | N-Channel Standard FETs |
Gate Charge (Qg) @ Vgs | 123nC @ 10V |
FET Type | N-Channel |
Supplier Device Package | TO-247AC |
PCN Design/Specification | Alternative Leadframe and Die Attach 11/Jun/2013 Pb/Sn/Ag Material Update 09/Feb/2015 |
Drain to Source Voltage (Vdss) | 200V |
Power Dissipation (Max) | 214W (Tc) |
Package / Case | TO-247-3 |
Technology | MOSFET (Metal Oxide) |
PCN Packaging | Package Drawing Update 19/Aug/2015 Packing Material Update 16/Sep/2016 |
Manufacturer | Infineon Technologies |
Design Resources | IRFP250NPBF Saber Model IRFP250NPBF Spice Model |
Other Names | *IRFP250NPBF SP001554946 |
Operating Temperature | -55°C ~ 175°C (TJ) |
FET Feature | - |
Datasheets | IRFP250NPbF |
Categories | Discrete Semiconductor Products |
Product Training Modules | High Voltage Integrated Circuits (HVIC Gate Drivers) |
Mounting Type | Through Hole |
EDA / CAD Models | Download from Accelerated Designs |
Rds On (Max) @ Id, Vgs | 75 mOhm @ 18A, 10V |
Vgs(th) (Max) @ Id | 4V @ 250µA |
Standard Package | 25 |
Series | HEXFET® |
Featured Product | Data Processing Systems |
Packaging | Bulk |
Part Status | Active |
Current - Continuous Drain (Id) @ 25°C | 30A (Tc) |