| Transistors - FETs, MOSFETs - Single |
| PCN Assembly/Origin | Backend Wafer Transfer 23/Oct/2013 Warehouse Transfer 29/Jul/2015 |
| FET Type | N-Channel |
| Input Capacitance (Ciss) (Max) @ Vds | 653pF @ 10V |
| Gate Charge (Qg) (Max) @ Vgs | 10.4nC @ 10V |
| Supplier Device Package | 6-PQFN (2x2) |
| Drain to Source Voltage (Vdss) | 25V |
| Power Dissipation (Max) | 2.1W (Ta) |
| Package / Case | 6-PowerVDFN |
| Technology | MOSFET (Metal Oxide) |
| PCN Packaging | Package Drawing Update 19/Aug/2015 |
| Manufacturer | Infineon Technologies |
| Design Resources | IRFHS8242TR2PBF Saber Model IRFHS8242TR2PBF Spice Model |
| Other Names | SP001554858 |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| FET Feature | - |
| Datasheets | IRFHS8242PBF |
| Categories | Discrete Semiconductor Products |
| Other Related Documents | Part Number Guide |
| Product Training Modules | High Voltage Integrated Circuits (HVIC Gate Drivers) Discrete Power MOSFETs 40V and Below |
| Mounting Type | Surface Mount |
| Rds On (Max) @ Id, Vgs | 13 mOhm @ 8.5A, 10V |
| Vgs(th) (Max) @ Id | 2.35V @ 25µA |
| Standard Package | 4,000 |
| Series | HEXFET® |
| Featured Product | Data Processing Systems |
| Packaging | Tape & Reel (TR) |
| Part Status | Active |
| Current - Continuous Drain (Id) @ 25°C | 9.9A (Ta), 21A (Tc) |
