| Transistors - FETs, MOSFETs - Single |
PCN Assembly/Origin | Mosfet Backend Wafer Processing 23/Oct/2013 Additional Assembly Site 23/Jul/2014 Assembly Site Revision 03/Feb/2015 Product Assembly Notification 10/Feb/2015 |
Online Catalog | N-Channel Standard FETs |
FET Type | N-Channel |
Input Capacitance (Ciss) (Max) @ Vds | 4290pF @ 25V |
Gate Charge (Qg) (Max) @ Vgs | 98nC @ 10V |
Supplier Device Package | PQFN (5x6) |
Drain to Source Voltage (Vdss) | 75V |
Power Dissipation (Max) | 3.6W (Ta) |
Package / Case | 8-PowerVDFN |
Technology | MOSFET (Metal Oxide) |
PCN Packaging | Package Drawing Update 19/Aug/2015 |
Manufacturer | Infineon Technologies |
Vgs (Max) | ±20V |
Other Names | IRFH5007TRPBFDKR |
Operating Temperature | -55°C ~ 150°C (TJ) |
FET Feature | - |
Datasheets | IRFH5007PbF |
Categories | Discrete Semiconductor Products |
Product Training Modules | High Voltage Integrated Circuits (HVIC Gate Drivers) |
Mounting Type | Surface Mount |
Rds On (Max) @ Id, Vgs | 5.9 mOhm @ 50A, 10V |
Vgs(th) (Max) @ Id | 4V @ 150µA |
Standard Package | 1 |
Series | HEXFET® |
RoHS Information | PQFN 5x6 RoHS Compliance |
Featured Product | Data Processing Systems |
Packaging | Digi-Reel® |
Part Status | Active |
Current - Continuous Drain (Id) @ 25°C | 17A (Ta), 100A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |