| Transistors - FETs, MOSFETs - Single |
| PCN Assembly/Origin | Mosfet Backend Wafer Processing 23/Oct/2013 Qualification Wafer Source 01/Apr/2014 Warehouse Transfer 29/Jul/2015 TO220/247 Fab Site Transfer 19/May/2016 |
| Online Catalog | N-Channel Standard FETs |
| FET Type | N-Channel |
| Input Capacitance (Ciss) (Max) @ Vds | 4520pF @ 50V |
| Gate Charge (Qg) (Max) @ Vgs | 120nC @ 10V |
| Supplier Device Package | TO-220AB |
| Drain to Source Voltage (Vdss) | 60V |
| Power Dissipation (Max) | 230W (Tc) |
| Package / Case | TO-220-3 |
| Technology | MOSFET (Metal Oxide) |
| PCN Packaging | Package Drawing Update 19/Aug/2015 Packing Material Update 16/Sep/2016 |
| Manufacturer | Infineon Technologies |
| Design Resources | IRFB3306PBF Saber Model IRFB3306PBF Spice Model |
| Vgs (Max) | ±20V |
| Other Names | SP001556002 |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| FET Feature | - |
| Datasheets | IRF(B,S,SL)3306PbF |
| Categories | Discrete Semiconductor Products |
| Product Training Modules | High Voltage Integrated Circuits (HVIC Gate Drivers) |
| Mounting Type | Through Hole |
| Rds On (Max) @ Id, Vgs | 4.2 mOhm @ 75A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 150µA |
| Standard Package | 50 |
| Series | HEXFET® |
| Featured Product | Automatic Opening Systems Data Processing Systems |
| Packaging | Tube |
| Part Status | Active |
| Current - Continuous Drain (Id) @ 25°C | 120A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
