Typical Input Capacitance @ Vds (pF) | 620@25V |
Configuration | Single |
Typical Turn-Off Delay Time (ns) | 30 |
PCB changed | 2 |
HTS | 8541.29.00.95 |
Number of Elements per Chip | 1 |
ECCN (US) | EAR99 |
Typical Rise Time (ns) | 55 |
Maximum Power Dissipation (mW) | 3800 |
Channel Mode | Enhancement |
Typical Turn-On Delay Time (ns) | 13 |
Automotive | No |
Minimum Operating Temperature (°C) | -55 |
Maximum Operating Temperature (°C) | 175 |
Supplier Package | D2PAK |
Typical Fall Time (ns) | 41 |
Process Technology | HEXFET |
Typical Gate to Source Charge (nC) | 7.9(Max) |
Package Height | 4.83(Max) |
Channel Type | P |
EU RoHS | Compliant with Exemption |
Maximum Continuous Drain Current (A) | 19 |
Military | No |
Maximum Drain Source Voltage (V) | 55 |
Maximum Gate Source Voltage (V) | ±20 |
Maximum Drain Source Resistance (mOhm) | 100@10V |
Material | Si |
Package Length | 10.67(Max) |
Typical Gate Charge @ 10V (nC) | 35(Max) |
Standard Package Name | TO-263 |
Typical Reverse Recovery Charge (nC) | 110 |
Pin Count | 3 |
Mounting | Surface Mount |
Typical Output Capacitance (pF) | 280 |
Tab | Tab |
Lead Shape | Gull-wing |
Part Status | Active |
Product Category | Power MOSFET |
Typical Gate to Drain Charge (nC) | 16(Max) |
Packaging | Tape and Reel |
Maximum Gate Threshold Voltage (V) | 4 |
Package Width | 9.65(Max) |
Typical Gate Charge @ Vgs (nC) | 35(Max)@10V |