Typical Input Capacitance @ Vds (pF) | 383@15V@P Channel|398@15V@N Channel |
Configuration | Dual Dual Drain |
Typical Turn-Off Delay Time (ns) | 17@P Channel|4.9@N Channel |
PCB changed | 8 |
HTS | 8541.29.00.95 |
Maximum Gate Source Leakage Current (nA) | 100 |
Number of Elements per Chip | 2 |
ECCN (US) | EAR99 |
Typical Rise Time (ns) | 4.8@N Channel|14@P Channel |
Maximum Power Dissipation (mW) | 2000 |
Channel Mode | Enhancement |
Typical Turn-On Delay Time (ns) | 8@P Channel|5.1@N Channel |
Automotive | No |
Minimum Operating Temperature (°C) | -55 |
Maximum Operating Temperature (°C) | 150 |
Supplier Package | SOIC N |
Maximum IDSS (uA) | 1 |
Typical Fall Time (ns) | 15@P Channel|3.9@N Channel |
Process Technology | HEXFET |
Package Height | 1.5(Max) |
Channel Type | P|N |
EU RoHS | Compliant |
Maximum Continuous Drain Current (A) | 4.6@P Channel|6.8@N Channel |
Military | No |
Maximum Drain Source Voltage (V) | 30 |
Maximum Gate Source Voltage (V) | ±20 |
Maximum Drain Source Resistance (mOhm) | 64@10V@P Channel|27@10V@N Channel |
Package Length | 5(Max) |
Typical Gate Charge @ 10V (nC) | 6.8@N Channel|8.1@P Channel |
Standard Package Name | SOP |
Pin Count | 8 |
Mounting | Surface Mount |
Lead Shape | Gull-wing |
Part Status | Active |
Product Category | Power MOSFET |
Packaging | Tape and Reel |
Maximum Gate Threshold Voltage (V) | 2.3 |
Package Width | 4(Max) |
Typical Gate Charge @ Vgs (nC) | 8.1@10V@P Channel|6.8@10V@N Channel |