| Configuration | Single |
| Typical Turn-Off Delay Time (ns) | 49 |
| Maximum Gate Source Leakage Current (nA) | 100 |
| Typical Rise Time (ns) | 23 |
| Channel Mode | Enhancement |
| Typical Turn-On Delay Time (ns) | 14 |
| Automotive | No |
| Supplier Package | TO-220AB |
| Maximum IDSS (uA) | 25 |
| Channel Type | N |
| EU RoHS | Compliant with Exemption |
| Maximum Continuous Drain Current (A) | 8 |
| Maximum Pulsed Drain Current @ TC=25°C (A) | 32 |
| Maximum Drain Source Voltage (V) | 500 |
| Maximum Drain Source Resistance (mOhm) | 850@10V |
| Standard Package Name | TO-220 |
| Typical Reverse Recovery Charge (nC) | 4200 |
| Pin Count | 3 |
| Mounting | Through Hole |
| Minimum Gate Threshold Voltage (V) | 2 |
| Typical Reverse Transfer Capacitance @ Vds (pF) | 120@25V |
| Lead Shape | Through Hole |
| Product Category | Power MOSFET |
| Typical Gate to Drain Charge (nC) | 32(Max) |
| Typical Gate Charge @ Vgs (nC) | 63(Max)@10V |
| Typical Input Capacitance @ Vds (pF) | 1300@25V |
| Maximum Gate Resistance (Ohm) | 2.8 |
| PCB changed | 3 |
| Number of Elements per Chip | 1 |
| Typical Reverse Recovery Time (ns) | 460 |
| ECCN (US) | EAR99 |
| Maximum Power Dissipation (mW) | 125000 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Operating Temperature (°C) | 150 |
| Typical Fall Time (ns) | 20 |
| Typical Gate to Source Charge (nC) | 9.3(Max) |
| Package Height | 9.01(Max) |
| Maximum Positive Gate Source Voltage (V) | 20 |
| Military | No |
| Minimum Gate Resistance (Ohm) | 0.6 |
| Maximum Gate Source Voltage (V) | ±20 |
| Typical Gate Plateau Voltage (V) | 5.9 |
| Package Length | 10.51(Max) |
| Typical Gate Charge @ 10V (nC) | 63(Max) |
| Maximum Diode Forward Voltage (V) | 2 |
| Operating Junction Temperature (°C) | -55 to 150 |
| Typical Output Capacitance (pF) | 310 |
| Tab | Tab |
| Part Status | Active |
| Maximum Gate Threshold Voltage (V) | 4 |
| Package Width | 4.65(Max) |
