| Product Attributes Select All |
| Input Capacitance (Ciss) @ Vds | 2910pF @ 15V |
| PCN Assembly/Origin | Backend Wafer Transfer 23/Oct/2013 |
| Category | Discrete Semiconductor Products |
| Gate Charge (Qg) @ Vgs | 36nC @ 4.5V |
| FET Type | MOSFET N-Channel, Metal Oxide |
| Supplier Device Package | 8-SO |
| Drain to Source Voltage (Vdss) | 30V |
| Package / Case | 8-SOIC (0.154", 3.90mm Width) |
| PCN Packaging | Package Drawing Update 19/Aug/2015 |
| Manufacturer | Infineon Technologies |
| Design Resources | IRF8113 Saber Model IRF8113 Spice Model |
| Other Names | IRF8113PBFDKR |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| FET Feature | Standard |
| Datasheets | IRF8113PbF |
| Product Training Modules | High Voltage Integrated Circuits (HVIC Gate Drivers) Discrete Power MOSFETs 40V and Below |
| Mounting Type | Surface Mount |
| Rds On (Max) @ Id, Vgs | 5.6 mOhm @ 17.2A, 10V |
| Vgs(th) (Max) @ Id | 2.2V @ 250µA |
| Standard Package | 1 |
| Series | HEXFET® |
| Power - Max | 2.5W |
| Packaging | Digi-Reel® |
| Part Status | Active |
| Current - Continuous Drain (Id) @ 25°C | 17.2A (Ta) |
| Family | Transistors - FETs, MOSFETs - Single |
