Typical Input Capacitance @ Vds (pF) | 1100@25V |
Configuration | Single Quad Drain Triple Source |
Typical Turn-Off Delay Time (ns) | 45 |
PCB changed | 8 |
HTS | 8541.29.00.95 |
Number of Elements per Chip | 1 |
ECCN (US) | EAR99 |
Typical Rise Time (ns) | 33 |
Maximum Power Dissipation (mW) | 2500 |
Channel Mode | Enhancement |
Typical Turn-On Delay Time (ns) | 16 |
Automotive | No |
Minimum Operating Temperature (°C) | -55 |
Maximum Operating Temperature (°C) | 150 |
Supplier Package | SOIC |
Typical Fall Time (ns) | 47 |
Process Technology | HEXFET |
Typical Gate to Source Charge (nC) | 5.7(Max) |
Package Height | 1.5(Max) |
Channel Type | P |
EU RoHS | Compliant |
Maximum Continuous Drain Current (A) | 5.8 |
Military | No |
Maximum Drain Source Voltage (V) | 30 |
Maximum Gate Source Voltage (V) | ±20 |
Maximum Drain Source Resistance (mOhm) | 45@10V |
Package Length | 5(Max) |
Typical Gate Charge @ 10V (nC) | 59(Max) |
Standard Package Name | SOP |
Typical Reverse Recovery Charge (nC) | 64 |
Pin Count | 8 |
Mounting | Surface Mount |
Typical Output Capacitance (pF) | 490 |
Lead Shape | Gull-wing |
Part Status | Active |
Product Category | Power MOSFET |
Typical Gate to Drain Charge (nC) | 21(Max) |
Packaging | Tape and Reel |
Maximum Gate Threshold Voltage (V) | 1(Min) |
Package Width | 4(Max) |
Typical Gate Charge @ Vgs (nC) | 59(Max)@10V |