| Unit Weight | 0.139332 oz |
| Configuration | Single |
| Id - Continuous Drain Current | 18 A |
| Channel Mode | Enhancement |
| Fall Time | 5.5 ns |
| RoHS | Y |
| Qg - Gate Charge | 44.7 nC |
| Transistor Type | 1 N-Channel |
| Package / Case | TO-252-3 |
| Number of Channels | 1 Channel |
| Typical Turn-On Delay Time | 10 ns |
| Technology | Si |
| Manufacturer | Infineon |
| Maximum Operating Temperature | + 175 C |
| Rds On - Drain-Source Resistance | 150 mOhms |
| Factory Pack Quantity | 50 |
| Mounting Style | SMD/SMT |
| Vgs - Gate-Source Voltage | 20 V |
| Typical Turn-Off Delay Time | 23 ns |
| Transistor Polarity | N-Channel |
| Minimum Operating Temperature | - 55 C |
| Vds - Drain-Source Breakdown Voltage | 200 V |
| Brand | Infineon Technologies |
| Type | HEXFET Power MOSFET |
| Rise Time | 19 ns |
| Product Category | MOSFET |
| Packaging | Tube |
| Pd - Power Dissipation | 150 W |
