| Transistors - FETs, MOSFETs - Single |
| PCN Assembly/Origin | Warehouse Transfer 29/Jul/2015 |
| FET Type | N-Channel |
| Input Capacitance (Ciss) (Max) @ Vds | 2980pF @ 10V |
| Gate Charge (Qg) (Max) @ Vgs | 44nC @ 4.5V |
| Supplier Device Package | TO-220AB |
| Drain to Source Voltage (Vdss) | 20V |
| Power Dissipation (Max) | 3.1W (Ta), 120W (Tc) |
| Package / Case | TO-220-3 |
| Technology | MOSFET (Metal Oxide) |
| PCN Packaging | Package Drawing Update 19/Aug/2015 |
| Manufacturer | Infineon Technologies |
| Design Resources | IRF3711 Saber Model IRF3711 Spice Model |
| PCN Obsolescence/ EOL | Mult Device EOL 11/May/2016 Mult Dev EOL 15/May/2016 |
| Other Names | *IRF3711PBF SP001561720 |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| FET Feature | - |
| Datasheets | IRF3711(S,L)PbF |
| Categories | Discrete Semiconductor Products |
| Product Training Modules | High Voltage Integrated Circuits (HVIC Gate Drivers) Discrete Power MOSFETs 40V and Below |
| Mounting Type | Through Hole |
| Rds On (Max) @ Id, Vgs | 6 mOhm @ 15A, 10V |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Standard Package | 50 |
| Series | HEXFET® |
| Featured Product | Data Processing Systems |
| Packaging | Tube |
| Part Status | Obsolete |
| Current - Continuous Drain (Id) @ 25°C | 110A (Tc) |
