| Product Attributes Select All |
Input Capacitance (Ciss) @ Vds | 3247pF @ 25V |
Category | Discrete Semiconductor Products |
Online Catalog | N-Channel Standard FETs |
Gate Charge (Qg) @ Vgs | 146nC @ 10V |
FET Type | MOSFET N-Channel, Metal Oxide |
Supplier Device Package | D2PAK |
PCN Design/Specification | Copper Plating Update 31/Aug/2015 Material Chg 24/Nov/2015 |
Drain to Source Voltage (Vdss) | 55V |
Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
PCN Packaging | Package Drawing Update 19/Aug/2015 Packing Material Update 16/Sep/2016 |
Manufacturer | Infineon Technologies |
Design Resources | IRF3205SPBF Saber Model IRF3205SPBF Spice Model |
Other Names | *IRF3205SPBF 64-2035PBF 64-2035PBF-ND SP001576776 |
Operating Temperature | -55°C ~ 175°C (TJ) |
FET Feature | Standard |
Datasheets | IRF3205(S,L)PbF |
Product Training Modules | High Voltage Integrated Circuits (HVIC Gate Drivers) |
Mounting Type | Surface Mount |
Rds On (Max) @ Id, Vgs | 8 mOhm @ 62A, 10V |
Vgs(th) (Max) @ Id | 4V @ 250µA |
Standard Package | 50 |
Series | HEXFET® |
Power - Max | 200W |
Packaging | Tube |
Part Status | Not For New Designs |
Current - Continuous Drain (Id) @ 25°C | 110A (Tc) |
Family | Transistors - FETs, MOSFETs - Single |