Infineon
IR2110L4
The IR2110L4 is a high voltage, high speed power MOSFET and IGBT driver with independent high and low side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. Logic inputs are compatible with standard CMOS or LSTTL outputs. The output drivers feature a high pulse current buffer stage designed for minimum driver cross-conduction. Propagation delays are matched to simplify use in high frequency applications. The floating channel can be used to drive an N-channel power MOSFET or IGBT in the high side configuration which operates up to 400 volts.
中间价(CNY):1480.3
IR2110L4 规格参数
| High and Low Sides Dependency | Independent |
| Typical Input High Threshold Voltage (V) | 8.5 |
| PCB changed | 14 |
| HTS | 8542.39.00.01 |
| ECCN (US) | EAR99 |
| Maximum Power Dissipation (mW) | 1600 |
| Special Features | Under Voltage Lockout |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Operating Temperature (°C) | 125 |
| Supplier Package | MO-036AB |
| Peak Output Current (A) | 2(Min) |