BSM25GP120 规格参数
| Mounting Style | Screw |
| Configuration | Array 7 |
| Gate-Emitter Leakage Current | 300 nA |
| Product | IGBT Silicon Modules |
| RoHS | Details |
| Minimum Operating Temperature | - 40 C |
| Brand | Infineon Technologies |
| Power Dissipation | 230 W |
| Package / Case | EconoPIM2 |
| Collector-Emitter Saturation Voltage | 2.55 V |
| Manufacturer | Infineon |