BSM100GB120DN2 规格参数
| Mounting Style | Screw |
| Configuration | Half Bridge |
| Gate-Emitter Leakage Current | 200 nA |
| Product | IGBT Silicon Modules |
| RoHS | Y |
| Minimum Operating Temperature | - 40 C |
| Brand | Infineon Technologies |
| Package / Case | Half Bridge2 |
| Collector-Emitter Saturation Voltage | 2.5 V |
| Manufacturer | Infineon |
| Product Category | IGBT Modules |