Typical Input Capacitance @ Vds (pF) | 9130@25V |
Configuration | Single Quint Source |
Typical Turn-Off Delay Time (ns) | 91 |
PCB changed | 6 |
Maximum Gate Source Leakage Current (nA) | 100 |
Number of Elements per Chip | 1 |
ECCN (US) | EAR99 |
Typical Rise Time (ns) | 240 |
Maximum Power Dissipation (mW) | 380000 |
Channel Mode | Enhancement |
Typical Turn-On Delay Time (ns) | 23 |
Automotive | Yes |
Minimum Operating Temperature (°C) | -55 |
Maximum Operating Temperature (°C) | 175 |
Supplier Package | D2PAK |
Maximum IDSS (uA) | 20 |
Typical Fall Time (ns) | 160 |
Process Technology | HEXFET |
Package Height | 4.83(Max) |
Channel Type | N |
EU RoHS | Compliant with Exemption |
Maximum Continuous Drain Current (A) | 400 |
Military | No |
Maximum Drain Source Voltage (V) | 40 |
Maximum Gate Source Voltage (V) | ±20 |
Maximum Drain Source Resistance (mOhm) | 1.25@10V |
Material | Si |
Supplier Temperature Grade | Automotive |
Package Length | 10.67(Max) |
Typical Gate Charge @ 10V (nC) | 160 |
AEC Qualified Number | AEC-Q101 |
Standard Package Name | TO-263 |
Pin Count | 7 |
Mounting | Surface Mount |
Tab | Tab |
Lead Shape | Gull-wing |
Part Status | NRND |
Product Category | Power MOSFET |
Packaging | Tube |
Maximum Gate Threshold Voltage (V) | 4 |
Package Width | 9.65(Max) |
Typical Gate Charge @ Vgs (nC) | 160@10V |