| Typical Input Capacitance @ Vds (pF) | 2545@25V |
| Configuration | Single Quad Drain Dual Source |
| Typical Turn-Off Delay Time (ns) | 42 |
| PCB changed | 7 |
| Number of Elements per Chip | 1 |
| ECCN (US) | EAR99 |
| Typical Rise Time (ns) | 49 |
| Maximum Power Dissipation (mW) | 2500 |
| Channel Mode | Enhancement |
| Typical Turn-On Delay Time (ns) | 13 |
| Automotive | Yes |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Operating Temperature (°C) | 175 |
| Supplier Package | Direct-FET M2 |
| Typical Fall Time (ns) | 45 |
| Process Technology | DirectFET |
| Package Height | 0.49(Max) |
| Channel Type | N |
| EU RoHS | Compliant |
| Maximum Continuous Drain Current (A) | 17 |
| Military | No |
| Maximum Drain Source Voltage (V) | 40 |
| Maximum Gate Source Voltage (V) | ±20 |
| Maximum Drain Source Resistance (mOhm) | 4.9@10V |
| Material | Si |
| Supplier Temperature Grade | Automotive |
| Package Length | 5.45(Max) |
| Typical Gate Charge @ 10V (nC) | 48 |
| AEC Qualified Number | AEC-Q101 |
| Pin Count | 7 |
| Mounting | Surface Mount |
| Lead Shape | No Lead |
| Part Status | Obsolete |
| Product Category | Power MOSFET |
| Packaging | Tape and Reel |
| Package Width | 5.05(Max) |
| Typical Gate Charge @ Vgs (nC) | 48@10V |
