| Typical Input Capacitance @ Vds (pF) | 622@400V |
| Typical Output Capacitance @ Vds (pF) | 77@400V |
| Configuration | Dual |
| Typical Turn-Off Delay Time (ns) | 4 |
| PCB changed | 6 |
| Maximum Gate Source Leakage Current (nA) | 100 |
| Number of Elements per Chip | 2 |
| Typical Power Gain (dB) | 13 |
| ECCN (US) | EAR99 |
| Typical Rise Time (ns) | 3 |
| Maximum Power Dissipation (mW) | 10000 |
| Channel Mode | Enhancement |
| Typical Turn-On Delay Time (ns) | 4 |
| Automotive | No |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Operating Temperature (°C) | 175 |
| Maximum IDSS (uA) | 50 |
| Typical Fall Time (ns) | 5 |
| Process Technology | ZMOS |
| Package Height | 3.3(Max) |
| Channel Type | N |
| Typical Forward Transconductance (S) | 3.8 |
| EU RoHS | Compliant |
| Maximum Continuous Drain Current (A) | 10 |
| Military | No |
| Maximum Drain Source Voltage (V) | 500 |
| Maximum Gate Source Voltage (V) | ±20 |
| Maximum Drain Source Resistance (mOhm) | 1000@20V |
| Package Length | 15 |
| Pin Count | 6 |
| Mounting | Surface Mount |
| Typical Drain Efficiency (%) | 65 |
| Mode of Operation | Class AB |
| Typical Reverse Transfer Capacitance @ Vds (pF) | 12@400V |
| Part Status | Obsolete |
| Maximum Gate Threshold Voltage (V) | 6.5 |
| Package Width | 16.51 |
| Maximum Frequency (MHz) | 175 |