| Number of Channels per Chip | 1 |
| Fabrication Technology | NPN Transistor |
| PCB changed | 2 |
| Maximum Collector-Emitter Voltage (V) | 30 |
| ECCN (US) | EAR99 |
| Maximum Power Dissipation (mW) | 125 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Operating Temperature (°C) | 125 |
| Supplier Package | Metal Can |
| Phototransistor Type | Phototransistor |
| Package Height | 3.18(Max) |
| Maximum Collector-Emitter Saturation Voltage (V) | 0.4 |
| Polarity | NPN |
| Lens Shape Type | Domed |
| EU RoHS | Compliant |
| Maximum Dark Current (nA) | 100 |
| Diameter | 1.57(Max) |
| Maximum Rise Time (ns) | 15000(Typ) |
| Maximum Fall Time (ns) | 15000(Typ) |
| Material | Silicon |
| Standard Package Name | TO-99 |
| Maximum Emitter-Collector Voltage (V) | 5 |
| Pin Count | 2 |
| Mounting | Panel |
| Type | IR Chip |
| Half Intensity Angle Degrees (°) | 48 |
| Viewing Orientation | Top View |
| Maximum Light Current (uA) | 7000(Min) |
