GP1M008A050CG 规格参数
| Transistors - FETs, MOSFETs - Single | |
| FET Type | N-Channel |
| Input Capacitance (Ciss) (Max) @ Vds | 937pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs | 21nC @ 10V |
| Supplier Device Package | D-Pak |
| Drain to Source Voltage (Vdss) | 500V |
| Power Dissipation (Max) | 120W (Tc) |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Technology | MOSFET (Metal Oxide) |
| Manufacturer | Global Power Technologies Group |
| Vgs (Max) | ±30V |