GS66516T-E01-TY 规格参数
| Mounting Style | SMD/SMT |
| Configuration | Single |
| Id - Continuous Drain Current | 60 A |
| Vgs - Gate-Source Breakdown Voltage | +/- 10 V |
| Transistor Polarity | N-Channel |
| Channel Mode | Enhancement |
| RoHS | Y |
| Qg - Gate Charge | 13 nC |
| Minimum Operating Temperature | - 55 C |
| Vds - Drain-Source Breakdown Voltage | 650 V |
| Brand | GaN Systems |