GS66506T-E01-TY 规格参数
| Mounting Style | SMD/SMT |
| Id - Continuous Drain Current | 22 A |
| Vgs - Gate-Source Breakdown Voltage | +/- 10 V |
| Transistor Polarity | N-Channel |
| Channel Mode | Enhancement |
| RoHS | Y |
| Qg - Gate Charge | 4.9 nC |
| Vds - Drain-Source Breakdown Voltage | 650 V |
| Brand | GaN Systems |
| Manufacturer | GaN Systems |
| Product Category | MOSFET |