GS61008P-E03-TY 规格参数
| Mounting Style | SMD/SMT |
| Id - Continuous Drain Current | 90 A |
| Vgs - Gate-Source Breakdown Voltage | +/- 10 V |
| Transistor Polarity | N-Channel |
| Channel Mode | Enhancement |
| RoHS | Y |
| Qg - Gate Charge | 16 nC |
| Vds - Drain-Source Breakdown Voltage | 100 V |
| Brand | GaN Systems |
| Series | GS61002P, GS61004P, GS61006P, GS61008P |
| Technology | GaN |