| Typical Gate Charge @ Vgs | 130 nC @ 10 V |
| Category | Power MOSFET |
| Configuration | Single |
| Maximum Gate Source Voltage | ±30 V |
| Typical TurnOff Delay Time | 144 ns |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage | 600 V |
| Channel Mode | Enhancement |
| Forward Diode Voltage | 1.35 V |
| Channel Type | N |
| Height | 19.5 mm |
| Maximum Operating Temperature | +150 °C |
| Width | 4.5 mm |
| Typical Turn On Delay Time | 26 ns |
| Operating Temperature Range | -55 to +150 °C |
| Dimensions | 15.5 x 4.5 x 19.5 mm |
| Mounting Type | Through Hole |
| Maximum Drain Source Resistance | 0.28 Ω |
| Minimum Operating Temperature | -55 °C |
| Pin Count | 3 |
| Typical Input Capacitance @ Vds | 4400 pF @ 25 V |
| Package Type | TO-3P |
| Forward Transconductance | 28 S |
| Length | 15.5 mm |
| Maximum Power Dissipation | 400 W |
| Maximum Continuous Drain Current | ±23 A |
