FQB34P10TM_F085 规格参数
| Transistors - FETs, MOSFETs - Single | |
| FET Type | P-Channel |
| Input Capacitance (Ciss) (Max) @ Vds | 2910pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs | 110nC @ 10V |
| Supplier Device Package | D²PAK (TO-263AB) |
| PCN Design/Specification | Description Chg 01/Apr/2016 FQB34P10TM_yyy Datasheet Update 12/Apr/2016 |
| Drain to Source Voltage (Vdss) | 100V |
| Power Dissipation (Max) | 3.75W (Ta), 155W (Tc) |
| Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Technology | MOSFET (Metal Oxide) |
| PCN Packaging | Tape and Box/Reel Barcode Update 07/Aug/2014 TO263 31/Aug/2016 |