| Transistors - FETs, MOSFETs - Single |
| Online Catalog | P-Channel MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Input Capacitance (Ciss) (Max) @ Vds | 2910pF @ 25V |
| Gate Charge (Qg) (Max) @ Vgs | 110nC @ 10V |
| Supplier Device Package | D²PAK (TO-263AB) |
| PCN Design/Specification | Description Chg 01/Apr/2016 Datasheet Update 05/Apr/2016 |
| Drain to Source Voltage (Vdss) | 100V |
| Power Dissipation (Max) | 3.75W (Ta), 155W (Tc) |
| Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Technology | MOSFET (Metal Oxide) |
| PCN Packaging | Tape and Box/Reel Barcode Update 07/Aug/2014 TO263 31/Aug/2016 |
| Manufacturer | Fairchild/ON Semiconductor |
| Vgs (Max) | ±25V |
| Other Names | FQB34P10TMCT |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| FET Feature | - |
| Datasheets | FQB34P10, FQI34P10 |
| Categories | Discrete Semiconductor Products |
| Product Training Modules | High Voltage Switches for Power Processing |
| Mounting Type | Surface Mount |
| Rds On (Max) @ Id, Vgs | 60 mOhm @ 16.75A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Standard Package | 1 |
| Series | QFET® |
| Packaging | Cut Tape (CT) |
| Part Status | Active |
| Current - Continuous Drain (Id) @ 25°C | 33.5A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
