| Typical Input Capacitance @ Vds (pF) | 1385@15V |
| Category | Power MOSFET |
| Taxonomy | FET Transistors > MOSFET |
| Number of Elements per Chip | 1 |
| Package Width (mm) | 4(Max) |
| Maximum Power Dissipation (mW) | 2500 |
| Channel Mode | Enhancement |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Operating Temperature (°C) | 150 |
| Supplier Package | SOIC N |
| Technology | TMOS |
| Channel Type | P |
| Package Height (mm) | 1.5(Max) |
| EU RoHS | Compliant |
| Maximum Continuous Drain Current (A) | 8.8 |
| Maximum Drain Source Voltage (V) | 30 |
| Maximum Gate Source Voltage (V) | ±25 |
| Maximum Drain Source Resistance (mOhm) | 20@10V |
| Typical Gate Charge @ 10V (nC) | 28 |
| Standard Package Name | SOIC |
| PCB | 8 |
| Pin Count | 8 |
| Mounting | Surface Mount |
| Package Length (mm) | 5(Max) |
| Lead Shape | Gull-wing |
| Packaging | Tape and Reel |
| Typical Gate Charge @ Vgs (nC) | 28@10V|16@5V |
