| Transistors - FETs, MOSFETs - Single |
Online Catalog | N-Channel Logic Level Gate FETs |
FET Type | N-Channel |
Input Capacitance (Ciss) (Max) @ Vds | 3000pF @ 50V |
Gate Charge (Qg) (Max) @ Vgs | 55nC @ 10V |
Supplier Device Package | 8-PQFN (5x6), Power56 |
PCN Design/Specification | Materials 14/Apr/2009 |
Drain to Source Voltage (Vdss) | 100V |
Power Dissipation (Max) | 2.5W (Ta), 104W (Tc) |
Package / Case | 8-PowerTDFN |
Technology | MOSFET (Metal Oxide) |
Manufacturer | Fairchild/ON Semiconductor |
Vgs (Max) | ±20V |
Other Names | FDMS86101DKR |
Operating Temperature | -55°C ~ 150°C (TJ) |
FET Feature | - |
Datasheets | FDMS86101 |
Categories | Discrete Semiconductor Products |
Mounting Type | Surface Mount |
Rds On (Max) @ Id, Vgs | 8 mOhm @ 13A, 10V |
Vgs(th) (Max) @ Id | 4V @ 250µA |
Standard Package | 1 |
Series | PowerTrench® |
Featured Product | Cloud Systems Computing Mid- and Low-Voltage MOSFETs |
Packaging | Digi-Reel® |
Part Status | Active |
Current - Continuous Drain (Id) @ 25°C | 12.4A (Ta), 60A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |