| Transistors - FETs, MOSFETs - Single |
PCN Assembly/Origin | Assembly Site Transfer 06/Apr/2015 |
Online Catalog | N-Channel MOSFET (Metal Oxide) |
FET Type | N-Channel |
Input Capacitance (Ciss) (Max) @ Vds | 2860pF @ 25V |
Gate Charge (Qg) (Max) @ Vgs | 60nC @ 10V |
Supplier Device Package | TO-3PN |
PCN Design/Specification | Heat Sink Drawing Update 11/Feb/2014 |
Drain to Source Voltage (Vdss) | 500V |
Power Dissipation (Max) | 239W (Tc) |
Package / Case | TO-3P-3, SC-65-3 |
Technology | MOSFET (Metal Oxide) |
PCN Packaging | Tape and Box/Reel Barcode Update 07/Aug/2014 |
Manufacturer | Fairchild/ON Semiconductor |
Vgs (Max) | ±30V |
Operating Temperature | -55°C ~ 150°C (TJ) |
FET Feature | - |
Datasheets | FDA18N50 |
Categories | Discrete Semiconductor Products |
Mounting Type | Through Hole |
Rds On (Max) @ Id, Vgs | 265 mOhm @ 9.5A, 10V |
Vgs(th) (Max) @ Id | 5V @ 250µA |
Standard Package | 30 |
Series | UniFET™ |
Packaging | Tube |
Part Status | Active |
Current - Continuous Drain (Id) @ 25°C | 19A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |