2N5551TAR 规格参数
| Transistors - Bipolar (BJT) - Single | |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Frequency - Transition | 100MHz |
| Datasheets | 2N5551 - MMBT5551 |
| Categories | Discrete Semiconductor Products |
| Current - Collector (Ic) (Max) | 600mA |
| Vce Saturation (Max) @ Ib, Ic | 200mV @ 5mA, 50mA |
| Mounting Type | Through Hole |
| Voltage - Collector Emitter Breakdown (Max) | 160V |
| Supplier Device Package | TO-92-3 |
| PCN Design/Specification | Copper Lead Frame 12/Oct/2007 |