| Transistors - FETs, MOSFETs - Single |
| Online Catalog | N-Channel Standard FETs |
| FET Type | N-Channel |
| Input Capacitance (Ciss) (Max) @ Vds | 1800pF @ 30V |
| Gate Charge (Qg) (Max) @ Vgs | 16nC @ 5V |
| Supplier Device Package | Die |
| Drain to Source Voltage (Vdss) | 60V |
| Package / Case | Die |
| Technology | GaNFET (Gallium Nitride) |
| Manufacturer | EPC |
| Other Names | 917-EPC2020ENGRDKR |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| FET Feature | - |
| Datasheets | EPC2020 Datasheet |
| Categories | Discrete Semiconductor Products |
| Product Training Modules | eGaN-based Eighth Brick Converter |
| Mounting Type | Surface Mount |
| Rds On (Max) @ Id, Vgs | 2.2 mOhm @ 31A, 5V |
| Vgs(th) (Max) @ Id | 2.5V @ 16mA |
| Standard Package | 1 |
| Series | eGaN® |
| Featured Product | Gen 4 eGaN FETs |
| Packaging | Digi-Reel® |
| Part Status | Discontinued at Digi-Key |
| Current - Continuous Drain (Id) @ 25°C | 60A (Ta) |
| Mfg Application Notes | Fourth Generation eGaN® FETs Assembling eGaN® FETs Die Attach Procedure Die Removal Procedure Using eGaN® FETs |
