| EPC9052 EPC BOARD DEV EPC2012C EGAN FET Unit Price 158.13000 917-1115-ND EPC9004C EPC BOARD DEV FOR EPC2012C 200V EGAN Unit Price 104.40000 917-1092-ND |
| Input Capacitance (Ciss) @ Vds | 140pF @ 100V |
| Category | Discrete Semiconductor Products |
| Online Catalog | N-Channel Standard FETs |
| Gate Charge (Qg) @ Vgs | 1.3nC @ 5V |
| FET Type | GaNFET N-Channel, Gallium Nitride |
| Supplier Device Package | Die Outline (4-Solder Bar) |
| Drain to Source Voltage (Vdss) | 200V |
| Package / Case | Die |
| Manufacturer | EPC |
| Other Names | 917-1084-6 |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| FET Feature | Standard |
| Datasheets | EPC2012C Datasheet |
| Product Training Modules | eGaN FET Reliability |
| Mounting Type | Surface Mount |
| Rds On (Max) @ Id, Vgs | 100 mOhm @ 3A, 5V |
| Vgs(th) (Max) @ Id | 2.5V @ 1mA |
| Standard Package | 1 |
| Series | eGaN® |
| Power - Max | - |
| Featured Product | EPC Low Voltage eGaN® FETs EPC9052/53/54 Development Boards |
| Packaging | Digi-Reel® |
| Part Status | Active |
| Current - Continuous Drain (Id) @ 25°C | 5A (Ta) |
| Family | Transistors - FETs, MOSFETs - Single |
| Mfg Application Notes | Second Generation eGaN® FETs Assembling eGaN® FETs Die Attach Procedure Die Removal Procedure Using eGaN® FETs |
