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MMBT5551-7
Diodes Inc

MMBT5551-7

Trans GP BJT NPN 160V 0.6A 300mW Automotive 3-Pin SOT-23 T/R
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MMBT5551-7 规格参数
ConfigurationSingle
PCB changed3
HTS8541.21.00.95
Number of Elements per Chip1
Maximum Collector-Emitter Voltage (V)160
ECCN (US)EAR99
Maximum Power Dissipation (mW)300
Maximum Base Emitter Saturation Voltage (V)1@5mA@50mA|1@1mA@10mA
AutomotiveYes
Minimum Operating Temperature (°C)-55
Maximum Operating Temperature (°C)150